R6015ANX transistors 1/5 10v drive nch mosfet R6015ANX z structure silicon n-channel mosfet z features 1) low on-resistance. 2) fast switching speed. 3) gate-source voltage (v gss ) guaranteed to be r 30v. 4) drive circuits can be simple. 5) parallel use is easy. z applications switching z dimensions (unit : mm) to-220fm (1)base (2)collector (3)emitter 4.5 2.8 0.75 3.2 ( 2 )( 3 ) ( 1 ) 0.8 2.54 2.6 2.54 1.3 1.2 14.0 12.0 8.0 2.5 10.0 15.0 z z packaging specifications z inner circuit package code basic ordering unit (pieces) ? 500 bulk R6015ANX type z z absolute maximum ratings (ta=25 q c) parameter range of storage temperature channel temperature total power dissipation (tc=25 c) drain current gate-source voltage drain-source voltage v dss v gss p d tch 600 v v a w c 30 15 i d i dp continuous pulsed a 60 50 150 tstg c ? 55 to + 150 avalanche energy avalanche current i as 7.5 e as 15.0 symbol limits unit ? 1 pw 10 s, duty cycle 1% ? 2 l 500 h, v dd = 50v, r g = 25 , starting, tch = 25 c ? 3 limited only by maximum temperature allowed ? 1 ? 3 ? 3 i s a i sp a a mj continuous pulsed 15 60 source current (body diode) ? 1 ? 2 ? 2 ? 1 body diode (1) gate (2) drain (3) source ? 1 (1) (2) (3)
R6015ANX transistors 2/5 z thermal resistance parameter c/w rth(ch-c) symbol limits unit channel to case 2.5 z z electrical characteristics (ta=25 q c) parameter gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge symbol i gss v (br)dss i dss v gs(th) r ds(on) c iss | y fs | c oss c rss min. ? 600 ? 2.5 ? ? 4.5 ? ? ? ? ? ? 0.23 1700 ? 1120 80 100 ? 100 4.5 0.3 ? ? ? ? na v gs = 30v, v ds = 0v i d = 1ma, v gs = 0v v ds = 600v, v gs = 0v v ds = 10v, i d = 1ma i d = 7.5a, v gs = 10v v ds = 25v i d = 7.5a, v ds = 10v v gs = 0v f = 1mhz v a v pf s pf pf t d(on) ? 50 ? ns t r ? 50 ? v gs = 10v ns t d(off) ? 150 ? r l = 40 ns t f ? 60 ? r g = 10 ns q g ? 50 ? v dd 300v i d = 15a v gs = 10v r l = 20 / r g = 10 nc q gd ? 20 ? nc typ. max. unit conditions i d = 7.5a, v dd 300v ? pulsed ? ? ? ? ? ? ? ? q gs ? 8 ? nc ? z z body diode characteristics (source-drain) (ta=25 q c) v sd ?? 1.5 v i s = 15a, v gs =0v forward voltage ? pulsed parameter symbol min. typ. max. unit conditions ?
R6015ANX transistors 3/5 z electrical characteristic curves 0 10 20 30 40 0 1020304050 ta= 25c pulsed 5.0v v gs = 4.5v 6.0v 7.0v 8.0v 6.5v 10v fig .2: typical output char acter istics( > ) 0.01 0.1 1 10 100 01 2345 67 v ds = 10v pulsed ta= 125c ta= 75c ta= 25c ta= - 25c fig .4 typical transfer char acter istics 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 v gs = 10v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig .6 static dr ain- sour ce on- state resistance vs. drain current 0 0.1 0.2 0.3 0.4 0.5 0.6 051015 ta= 25c pulsed i d =7.5a i d =15a fig .7 static dr ain- sour ce on- state resistance vs. gate sour ce volta ge 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 v ds = 10v pulsed ta= - 25c ta= 25c ta= 75c ta= 125c fig .9 for ward tr ansfer admittance vs. drain current 0.01 0.1 1 10 100 0.1 1 10 100 1000 p w = 10ms ta = 25c single pulse dc oper ation p w =100us p w =1ms oper ation in this ar ea is limited by r ds(on) fig .1 maximum safe oper ating aer a fig .3: typical output characteristics( > ) 0 5 10 15 20 012345 ta= 25c pulsed v gs = 4.5v 5.0v 6.0v 5.5v 6.5v 7.0v 8.0v 10v fig .8 static dr ain- sour ce on- state resistance vs. channel temper atur e 0 0.1 0.2 0.3 0.4 0.5 0.6 -50 0 50 100 150 v gs = 10v pulsed i d = 7.5a i d = 15a fig .5 gate thr eshold voltag e vs. channel temper atur e 0 1 2 3 4 5 6 -50 0 50 100 150 v ds = 10v i d = 1ma drain-source voltage : v ds ( v ) drain current : i d (a) drain-source voltage: v ds (v) drain current: i d (a) drain-source voltage: v ds (v) drain current: i d (a) drain current : i d (a) static drain-source on-state resistance : r ds(on) (
) channel temperature: t ch (c) gate threshold voltage: v gs(th) (v) gate-source voltage : v gs (v) drain current : i d (a) gate-source voltage : v gs (v) static drain-source on-state resistance : r ds(on) (
) channel temperature: t ch (c) static drain-source on-state resistance : r ds(on ) (
) drain current : i d (a) forward transfer admittance : |yfs| (s)
R6015ANX transistors 4/5 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 ta = 25c sing le pulse : 1unit rth b ch-a bb t b = c2b t b rth b ch-a b rth b ch-a b = 53.0 c/w 10 100 1000 0.1 1 10 100 ta= 25c di / dt= 100a / s v gs = 0v pulsed fig .13 rever se recover y time vs.rever se dr ain curr ent 0.01 0.1 1 10 100 0 0.5 1 1.5 v gs = 0v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig .10 rever se dr ain cur r ent vs. sourse-drain voltage 0 5 10 15 0 1020 304050 ta= 25c v dd = 300v i d = 12a r g = 10
pulsed fig .12 dynamic input char acter istics 1 10 100 1000 10000 0.1 1 10 100 1000 c is s c oss c rss ta= 25c f= 1mhz v gs = 0v fig .11 typical capacitance vs. drain-source voltage 1 10 100 1000 10000 0.01 0.1 1 10 100 t r t f t d(on) t d(off) ta= 25c v dd = 300v v gs = 10v r g = 10
pulsed fig.14 switching a char acter istics fig .15 normalized tr ansient ther mal resistance vs. pulse width total gate charge : q g (nc) gate-source voltage : v gs (v) drain-source voltage : v ds (v) capacitance : c (pf) source-drain voltage : v sd (v) reverse drain current : i dr (a) reverse drain current : i dr (a) reverse recovery time: t rr (ns) drain current : i d (a) switching time : t (ns) pulse width : pw(s) normarized transient thermal resistance : r (t)
R6015ANX transistors 5/5 z switching characteristics measurement circuit fig.1-1 switching time measurement circuit ! fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit ! fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalanche waveform i g (const.)
notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / europe / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2008 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21 saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix
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